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Home /Products/IC Integrated Circuits/IC Integrated Circuits LND150N3-G
IC Integrated Circuits LND150N3-G
IC Integrated Circuits LND150N3-G

IC Integrated Circuits LND150N3-G

Product Details:
Place of Origin: USA
Brand Name: Microchip Technology
Model Number: LND150N3-G
Payment & Shipping Terms:
Minimum Order Quantity: 50PCS
Price: RFQ
Packaging Details: ESD/Vacuum/Foam/Cartons
Delivery Time: Immediately
Payment Terms: T/T, Western Union, escrow, Paypal, Visa, MoneyGram
Supply Ability: RFQ
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Specifications Product Description Request A Quote
Specifications
Specifications
Category: Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature: Depletion Mode
Product Status: Active
Mounting Type: Through Hole
Vgs(th) (Max) @ Id: -
Input Capacitance (Ciss) (Max) @ Vds: 10 PF @ 25 V
Series: -
Vgs (Max): ±20V
Package: Bag
Supplier Device Package: TO-92-3
Rds On (Max) @ Id, Vgs: 1000Ohm @ 500µA, 0V
Mfr: Microchip Technology
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Drive Voltage (Max Rds On, Min Rds On): 0V
Power Dissipation (Max): 740mW (Ta)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Drain To Source Voltage (Vdss): 500 V
Current - Continuous Drain (Id) @ 25°C: 30mA (Tj)
Technology: MOSFET (Metal Oxide)
Base Product Number: LND150
Product Description
N-Channel 500 V 30mA (Tj) 740mW (Ta) Through Hole TO-92-3
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