Product Details:
|
|
Place of Origin: | USA |
---|---|
Brand Name: | Infineon Technologies |
Model Number: | CY62167EV30LL-45BVXI |
Payment & Shipping Terms:
|
|
Minimum Order Quantity: | 50PCS |
Price: | RFQ |
Packaging Details: | ESD/Vacuum/Foam/Cartons |
Delivery Time: | Immediately |
Payment Terms: | T/T, Western Union, escrow, Paypal, Visa, MoneyGram |
Supply Ability: | RFQ |
IC Integrated Circuits CY62167EV30LL-45BVXI VFBGA-48 SRAM
Product Description:
The CY62167EV30 is a high-performance CMOS static RAM organized as 1M words by 16 bits or 2M words by 8 bits. This device features an advanced circuit design that provides an ultra low active current. Ultra low active current is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that reduces power consumption by 99 percent when addresses are not toggling. Place the device in standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input and output pins (I/O0 through I/O15) are placed in a high-impedance state when: the device is deselected (CE1 HIGH or CE2 LOW), outputs are disabled (OE HIGH), both Byte High Enable and Byte Low Enable are disabled (BHE, BLE HIGH), or a write operation is in progress (CE1 LOW, CE2 HIGH and WE LOW). To write to the device, take Chip Enables (CE1 LOW and CE2 HIGH) and Write Enable (WE) input LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7) is written into the location specified on the address pins (A0 through A19). If Byte High Enable (BHE) is LOW, then data from the I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A19).
Product Features:
■ TSOP I package configurable as 1M × 16 or 2M × 8 SRAM ■ Very high speed: 45 ns ■ Temperature ranges ❐ Industrial: –40 °C to +85 °C ■ Wide voltage range: 2.20 V to 3.60 V ■ Ultra-low standby power ❐ Typical standby current: 1.5 A ❐ Maximum standby current: 12 A ■ Ultra-low active power ❐ Typical active current: 7 mA at f = 1 MHz ■ Easy memory expansion with CE1, CE2, and OE Features ■ Automatic power-down when deselected ■ CMOS for optimum speed and power ■ Offered in Pb-free 48-ball VFBGA and 48-pin TSOP I packages
Parameter Table:
Product Attribute | Attribute Value |
Manufacturer: | Infineon |
Product Category: | SRAM |
RoHS: | PB Free |
Memory Size: | 16 Mbit |
Organization: | 2 M x 8/1 M x 16 |
Access Time: | 45 ns |
Interface Type: | Parallel |
Supply Voltage - Max: | 3.6 V |
Supply Voltage - Min: | 2.2 V |
Supply Current - Max: | 30 mA |
Minimum Operating Temperature: | - 40 C |
Maximum Operating Temperature: | + 85 C |
Mounting Style: | SMD/SMT |
Package / Case: | VFBGA-48 |
Packaging: | Tray |
Brand: | Infineon Technologies |
Memory Type: | Volatile |
Moisture Sensitive: | Yes |
Number of Ports: | 1 |
Product Type: | SRAM |
Series: | CY62167EV30LL |
FAQ:
No MOQ needed, and if you buy more, will enjoy better prices.
You can ask our staff for apply free samples.
We provide: Visa/MasterCard/Wire Transfer/WU/MG/PayPal etc.
We provide:DHL/UPS/TNT/Fedex/EMS/Aramex/ePacket etc.
Quality Warranty Period:12 Months.
All products were tested before shipment, and the quality problems were negligible.
Yes, We provide one-stop purchase service, Please send us your Bom List