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IC Integrated Circuits CY62167EV30LL-45BVXI VFBGA-48 SRAM

Product Details:
Place of Origin: USA
Brand Name: Infineon Technologies
Model Number: CY62167EV30LL-45BVXI
Payment & Shipping Terms:
Minimum Order Quantity: 50PCS
Price: RFQ
Packaging Details: ESD/Vacuum/Foam/Cartons
Delivery Time: Immediately
Payment Terms: T/T, Western Union, escrow, Paypal, Visa, MoneyGram
Supply Ability: RFQ
Specifications Product Description Request A Quote
Specifications
Specifications
RoHS: PB Free
Mounting Style: SMD/SMT
Package: VFBGA-48
Series: CY62167EV30LL
Factory Pack Quantity: 4800
Product Type: SRAM
Product Description

IC Integrated Circuits CY62167EV30LL-45BVXI VFBGA-48 SRAM​

 

Product Description:

The CY62167EV30 is a high-performance CMOS static RAM organized as 1M words by 16 bits or 2M words by 8 bits. This device features an advanced circuit design that provides an ultra low active current. Ultra low active current is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that reduces power consumption by 99 percent when addresses are not toggling. Place the device in standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input and output pins (I/O0 through I/O15) are placed in a high-impedance state when: the device is deselected (CE1 HIGH or CE2 LOW), outputs are disabled (OE HIGH), both Byte High Enable and Byte Low Enable are disabled (BHE, BLE HIGH), or a write operation is in progress (CE1 LOW, CE2 HIGH and WE LOW). To write to the device, take Chip Enables (CE1 LOW and CE2 HIGH) and Write Enable (WE) input LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7) is written into the location specified on the address pins (A0 through A19). If Byte High Enable (BHE) is LOW, then data from the I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A19).

Product Features:

■ TSOP I package configurable as 1M × 16 or 2M × 8 SRAM ■ Very high speed: 45 ns ■ Temperature ranges ❐ Industrial: –40 °C to +85 °C ■ Wide voltage range: 2.20 V to 3.60 V ■ Ultra-low standby power ❐ Typical standby current: 1.5 A ❐ Maximum standby current: 12 A ■ Ultra-low active power ❐ Typical active current: 7 mA at f = 1 MHz ■ Easy memory expansion with CE1, CE2, and OE Features ■ Automatic power-down when deselected ■ CMOS for optimum speed and power ■ Offered in Pb-free 48-ball VFBGA and 48-pin TSOP I packages

 

Parameter Table:

Product Attribute Attribute Value
Manufacturer: Infineon
Product Category: SRAM
RoHS: PB Free
Memory Size: 16 Mbit
Organization: 2 M x 8/1 M x 16
Access Time: 45 ns
Interface Type: Parallel
Supply Voltage - Max: 3.6 V
Supply Voltage - Min: 2.2 V
Supply Current - Max: 30 mA
Minimum Operating Temperature: - 40 C
Maximum Operating Temperature: + 85 C
Mounting Style: SMD/SMT
Package / Case: VFBGA-48
Packaging: Tray
Brand: Infineon Technologies
Memory Type: Volatile
Moisture Sensitive: Yes
Number of Ports: 1
Product Type: SRAM
Series: CY62167EV30LL

 

FAQ:

  • Whats your MOQ?

No MOQ needed, and if you buy more, will enjoy better prices.

  • Can i get a free sample?

You can ask our staff for apply free samples.

  • What payment methods do you support?

We provide: Visa/MasterCard/Wire Transfer/WU/MG/PayPal etc.

  • What about the shipment methods?

We provide:DHL/UPS/TNT/Fedex/EMS/Aramex/ePacket etc.

  • How will you Guaranteed quality?

Quality Warranty Period:12 Months.

  • Are the products tested before shipment?

All products were tested before shipment, and the quality problems were negligible.

  • Do you provide BOM services?

Yes, We provide one-stop purchase service, Please send us your Bom List

Get in touch with us
Contact Person : Mr. Jack
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